Name: STGB15H60DF
Brand: STMicroelectronics
SKU: STGB15H60DF
Price: 2.59000 USD
Availability: InStock

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STGB15H60DF

Manufacturer part number:STGB15H60DF

Manufacturer:STMicroelectronics

Description:STGB15H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB15H60DF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	2.000002g
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	115W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGB15
Element Configuration	Single
Input Type	Standard
Power - Max	115W
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	30A
Reverse Recovery Time	103 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.6V
Max Breakdown Voltage	600V
Test Condition	400V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 15A
IGBT Type	Trench Field Stop
Gate Charge	81nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	24.5ns/118ns
Switching Energy	136μJ (on), 207μJ (off)
Height	4.6mm
Length	10.4mm
Width	9.35mm
RoHS Status	ROHS3 Compliant

STGB15H60DF Product Details

STGB15H60DF Description

The STGB15H60DF is a Trench gate field-stop IGBT, H series 600 V, 14 A high speed. These gadgets are IGBTs that were created employing a cutting-edge, exclusive trench gate fieldstop structure. These components are a part of the IGBT H series, which offers the best conduction and switching loss trade-off for high switching frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.