STF11NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STF11NM60N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STF11
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 50V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Rise Time
18.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.45Ohm
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
40A
Avalanche Energy Rating (Eas)
200 mJ
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1410 items
Pricing & Ordering
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Unit Price
Ext. Price
STF11NM60N Product Details
STF11NM60N Description
STF11NM60N is a 600v N-channel MDmesh? II Power MOSFET. The STF11NM60N is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET STF11NM60N associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is therefore suitable for the most demanding high-efficiency converters.
STF11NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 600v
Gate-source voltage: ±20v
STF11NM60N Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
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