Name: STE110NS20FD
Brand: STMicroelectronics
SKU: STE110NS20FD
Availability: InStock

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STE110NS20FD

Manufacturer part number:STE110NS20FD

Manufacturer:STMicroelectronics

Description:STE110NS20FD datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STE110NS20FD Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MESH OVERLAY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	110A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STE1
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	504nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	140 ns
Turn-Off Delay Time	245 ns
Continuous Drain Current (ID)	110A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	750 mJ
RoHS Status	ROHS3 Compliant

STE110NS20FD Product Details

STE110NS20FD Description

STMicroelectronics has developed a cutting-edge series of Power MOSFETs with exceptional performances using the most recent high voltage MESH OVERLAYTM technology. With the help of the company's exclusive edge termination structure and the newly-patentable STrip layout, the lowest RDS(ON) per area, remarkable avalanche and dv/dt capabilities, and unmatched gate charge and switching characteristics may be achieved.