Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STD95N3LLH6

STD95N3LLH6

STD95N3LLH6

STMicroelectronics

STD95N3LLH6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STD95N3LLH6 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature175°C TJ
PackagingTape & Reel (TR)
Series DeepGATE™, STripFET™ VI
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 4.2MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number STD95
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 70W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation70W
Case Connection DRAIN
Turn On Delay Time19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time91ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 23.4 ns
Turn-Off Delay Time 24.5 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 150 mJ
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4312 items

Pricing & Ordering

QuantityUnit PriceExt. Price

STD95N3LLH6 Product Details

STD95N3LLH6 Description



STD95N3LLH6 MOSFET uses the 6th generation, which has a novel gate design. STD95N3LLH6 resultant Power MOSFET has one of the lowest RDS(on) across all of the packages. STD95N3LLH6 IC has the following characteristic: High avalanche ruggedness, Extremely low on-resistance RDS(on), Low gate drive power losses.


STD95N3LLH6 Features


RDS(on) * Qg industry benchmark
High avalanche ruggedness
Extremely low on-resistance RDS(on)
Low gate drive power losses


STD95N3LLH6 Applications


Switching applications
PFC
server/telecom power
FPD TV power

Get Subscriber

Enter Your Email Address, Get the Latest News