STD85N3LH5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD85N3LH5 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ V
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
5mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD85
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Case Connection
DRAIN
Turn On Delay Time
6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 5V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±22V
Fall Time (Typ)
10.8 ns
Turn-Off Delay Time
23.6 ns
Continuous Drain Current (ID)
40A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
22V
Drain Current-Max (Abs) (ID)
80A
Drain to Source Breakdown Voltage
30V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
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STD85N3LH5 Product Details
STD85N3LH5 Description
STD85N3LH5 is a type of N-channel STripFET?V power MOSFET provided by STMicroelectronics based on its fifth generation of STripFET?V technology. Low on-state resistance, low gate drive power losses and high avalanche ruggedness can be ensured when operating. STD85N3LH5 is also able to provide one of the best-in-class figures of merit (FOM).
STD85N3LH5 Features
Low on-state resistance
Low gate drive power losses
High avalanche ruggedness
Supplied in the TO-220 package
Unique STripFET?V technology
STD85N3LH5 Applications
Switching applications
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