Name: STD3PK50Z
Brand: STMicroelectronics
SKU: STD3PK50Z
Availability: InStock

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STD3PK50Z

Manufacturer part number:STD3PK50Z

Manufacturer:STMicroelectronics

Description:STD3PK50Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STD3PK50Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	DPAK-0068772_A
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	3Ohm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD3N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	85W
Turn On Delay Time	16 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.8A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	2.8A
Threshold Voltage	-3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	3.75 V
Height	2.63mm
Length	6.6mm
Width	2.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STD3PK50Z Product Details

Description

The STD3PK50Z is a P-channel 500 V, 3 |? typ., 2.8 A Zener-protected SuperMESH? Power MOSFET in a DPAK package. Through the improvement of ST's well-known strip-based PowerMESH? layout, STMicroelectronics' SuperMESH? technology was used to create this P-channel Zener-protected Power MOSFET. This device is made to offer a high degree of dv/dt capability for the most demanding applications in addition to a notable reduction in on-resistance.