Name: STD30NF06
Brand: STMicroelectronics
SKU: STD30NF06
Availability: InStock

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STD30NF06

Manufacturer part number:STD30NF06

Manufacturer:STMicroelectronics

Description:STD30NF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STD30NF06 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	28A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STD30N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	28A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.028Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	112A
Height	2.4mm
Length	6.6mm
Width	6.2mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STD30NF06 Product Details

STD30NF06 Description

STD30NF06 is a kind of N-channel STripFET? II power MOSFET developed by STMicroelectronics utilizing its unique "Single Feature Size?"strip-based process. It is able to deliver low on-state resistance, rugged avalanche characteristics, and less critical alignment steps based on its extremely high packing density. As a result, excellent manufacturing reproducibility can be ensured.