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STD12NM50ND

STD12NM50ND

STD12NM50ND

STMicroelectronics

STD12NM50ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STD12NM50ND Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series FDmesh™ II
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STD12
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 100W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation100W
Case Connection DRAIN
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 11A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 44A
DS Breakdown Voltage-Min 500V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2872 items

STD12NM50ND Product Details

Description


The STD12NM50ND is a D2PAK, DPAK, TO-220FP N-channel 500 V, 0.29, 11 A, FDmeshTM II Power MOSFET (with fast diode). The MDmeshTM properties are combined with an intrinsic fast-recovery body diode in the FDmeshTM technology. The end solution has lower on-resistance and faster switching commutations, making it ideal for bridge topologies with low trr requirements.



Features


● 100% avalanche tested

● Low gate charge and input capacitance

● Low input gate resistance

● provide greater efficiency while operating at lower voltages

● operate at lower power and draws no current



Applications


● Switching applications

● Switch

● Auto Intensity Control

● Amplifiers

● Chopper


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