Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STB50NE10T4

STB50NE10T4

STB50NE10T4

STMicroelectronics

MOSFET N-CH 100V 50A D2PAK

SOT-23

STB50NE10T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Series STripFET™
JESD-609 Code e3
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating50A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STB50N
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 180W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation180W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 166nC @ 10V
Rise Time100ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.027Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 300 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2603 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About STB50NE10T4

The STB50NE10T4 from STMicroelectronics is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 50A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the STB50NE10T4, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News