Name: STB40NS15T4
Brand: STMicroelectronics
SKU: STB40NS15T4
Availability: InStock

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STB40NS15T4

Manufacturer part number:STB40NS15T4

Manufacturer:STMicroelectronics

Description:STB40NS15T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB40NS15T4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	MESH OVERLAY™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	45mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	40A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB40N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2420pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Dual Supply Voltage	150V
Nominal Vgs	3 V
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STB40NS15T4 Product Details

STB40NS15T4 Description

STB40NS15T4 belongs to the family of N-channel MESH OVERLAY? power MOSFETs provided by STMicroelectronics based on its consolidated strip layout-based MESH OVERLAY? process. The resulting STB40NS15T4 is able to deliver low gate charge, exceptional dv/dt capability, and extremely low intrinsic capacitances.