Name: STB25NM60N
Brand: STMicroelectronics
SKU: STB25NM60N
Availability: InStock

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STB25NM60N

Manufacturer part number:STB25NM60N

Manufacturer:STMicroelectronics

Description:STB25NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB25NM60N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	160mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB25N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	160W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 50V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	94 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	84A
Dual Supply Voltage	600V
Avalanche Energy Rating (Eas)	850 mJ
Nominal Vgs	3 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STB25NM60N Product Details

STB25NM60N Description

STB25NM60N is a 600v N-channel second-generation MDmesh? Power MOSFET. This series of devices implement the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. The STB25NM60N is, therefore, suitable for the most demanding high-efficiency converters.