Name: STB25NM50N
Brand: STMicroelectronics
SKU: STB25NM50N
Availability: InStock

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STB25NM50N

Manufacturer part number:STB25NM50N

Manufacturer:STMicroelectronics

Description:STB25NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB25NM50N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	550V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	22A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB25N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	160W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2565pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	88A
Dual Supply Voltage	500V
Nominal Vgs	3 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STB25NM50N Product Details

STB25NM50N Description

STB25NM50N is a 500v N-channel MDmesh? II Power MOSFET. This STB25NM50N is realized with the second generation of MDmesh? Technology. This

revolutionary MOSFET STB25NM50N associates a new vertical structure to the Company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.