STB23NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STB23NM60ND Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STB23N
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Turn On Delay Time
21 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2050pF @ 50V
Current - Continuous Drain (Id) @ 25°C
19.5A Tc
Gate Charge (Qg) (Max) @ Vgs
70nC @ 10V
Rise Time
45ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
90 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
78A
Avalanche Energy Rating (Eas)
700 mJ
Height
4.6mm
Length
10.75mm
Width
10.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2233 items
STB23NM60ND Product Details
STB23NM60ND Description
STB23NM60ND belongs to the family of N-channel FDmesh? II power MOSFETs with intrinsic fast-recovery body diode. It is manufactured by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for bridge topologies and ZVS phase-shift converters.
STB23NM60ND Features
Low on-state resistance
Low gate input resistance
Low input capacitance and gate charge
High dv/dt and avalanche capabilities
Available in the D2PAK package
STB23NM60ND Applications
Bridge topologies
ZVS phase-shift converters
Related Products
Similar Transistors - FETs, MOSFETs - Single from STMicroelectronics and other manufacturers
