Name: STB200NF04T4
Brand: STMicroelectronics
SKU: STB200NF04T4
Availability: InStock

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STB200NF04T4

Manufacturer part number:STB200NF04T4

Manufacturer:STMicroelectronics

Description:STB200NF04T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB200NF04T4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Series	STripFET™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	3.7MOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	120A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB200N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.7m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Rise Time	320ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	480A
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STB200NF04T4 Product Details

STB200NF04T4 Description

This STB200NF04T4 MOSFET is the most recent evolution of STMicroelectronics' "Single Feature SizeTM" stripbased technology. The resulting transistor has a high packing density for low on-resistance, tough avalanche properties, and fewer key alignment stages, resulting in exceptional manufacturing reproducibility.