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STB12NM50FDT4

STB12NM50FDT4

STB12NM50FDT4

STMicroelectronics

STB12NM50FDT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STB12NM50FDT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Series FDmesh™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating12A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STB12N
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 160W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation160W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 400 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1246 items

Pricing & Ordering

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STB12NM50FDT4 Product Details

STB12NM50FDT4 Description


The FDmeshTM combines an intrinsic fast-recovery body diode with all the benefits of reduced on-resistance and quick switching. Therefore, it is highly advised for bridge topologies, specifically ZVS phase-shift converters.



STB12NM50FDT4 Features


TYPICAL RDS(on) = 0.32 Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE CHARGE

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS



STB12NM50FDT4 Applications


ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


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