Name: STB10NK60ZT4
Brand: STMicroelectronics
SKU: STB10NK60ZT4
Price: 3.87000 USD
Availability: InStock

new-10%

STB10NK60ZT4

Manufacturer part number:STB10NK60ZT4

Manufacturer:STMicroelectronics

Description:N-Channel Tape & Reel (TR) 750m Ω @ 4.5A, 10V ±30V 1370pF @ 25V 70nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Package:SOT-23

Datasheet:STB10NK60ZT4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	750mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Voltage - Rated DC	600V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	10A
Time@Peak Reflow Temperature-Max (s)	30
Base Part Number	STB10N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	115W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	115W
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	750m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Dual Supply Voltage	600V
Nominal Vgs	3.75 V
Height	4.6mm
Length	10.4mm
Width	9.35mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STB10NK60ZT4 Product Details

STB10NK60ZT4 Description

These N-channel Zener-protected Power MOSFETs were created utilizing Super MESHTM technology from STMicroelectronics, which was optimized using ST's well-known strip-based Power MESHTM layout. This device is made to offer a high degree of dv/dt capability for the most demanding applications in addition to a notable reduction in on resistance.