SCT10N120AG Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovativeproperties of wide bandgap materials. This results in unsurpassed on-resistance perunit area and very good switching performance almost independent of temperature.The outstanding thermal properties of the SiC material, combined with the device’shousing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features renderthe device perfectly suitable for high-efficiency and high power density applications.
SCT10N120AG Features
• AEC-Q101 qualified
• Very tight variation of on-resistance vs. temperature
• Very high operating temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
SCT10N120AG Applications
• Motor drives
• EV chargers
• High voltage DC-DC converters
• Switch mode power supplies
