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MJD44H11T4-A

MJD44H11T4-A

MJD44H11T4-A

STMicroelectronics

MJD44H11T4-A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

MJD44H11T4-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingCut Tape (CT)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Max Power Dissipation20W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MJD44
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Power Dissipation20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-252AA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage80V
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9621 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.345984$0.345984
10$0.326400$3.264
100$0.307925$30.7925
500$0.290495$145.2475
1000$0.274052$274.052

MJD44H11T4-A Product Details

MJD44H11T4-A Overview


In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.There is a breakdown input voltage of 80V volts that it can take.In extreme cases, the collector current can be as low as 8A volts.

MJD44H11T4-A Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V

MJD44H11T4-A Applications


There are a lot of STMicroelectronics MJD44H11T4-A applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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