IRF740 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
IRF740 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
PowerMESH™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH VOLTAGE, FAST SWITCHING
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
400V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IRF7
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Voltage
400V
Power Dissipation-Max
125W Tc
Element Configuration
Single
Current
105A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
550m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
43nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
10A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.55Ohm
Drain to Source Breakdown Voltage
400V
Avalanche Energy Rating (Eas)
520 mJ
Feedback Cap-Max (Crss)
120 pF
Turn Off Time-Max (toff)
196ns
Turn On Time-Max (ton)
79ns
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
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IRF740 Product Details
IRF740 Description : The IRF740 is a high-voltage N-channel MOSFET that is primarily used in high-voltage, high-speed switching applications. This transistor can handle a maximum load voltage of 400V. The Mosfet can switch loads consuming up to 10A when a gate threshold voltage of 10V is applied across the Gate and Source pins. Because mosfets are meant to switch high current, high voltage loads, they have a rather high gate voltage and hence cannot be utilized directly with a CPU's I/O pin. The IRF740 Mosfet has a high on-resistance (RDS) of roughly 0.55 ohms, which is a significant drawback. As a result, this mosfet cannot be used in applications that require high switching efficiency. But it can work as an amplifier and it can be used in many types of audio amplifier circuits.
IRF740 Features : Package Type: TO-220 Transistor Type: N Channel Rise time and fall time is 27nS and 24nS Drain Source Resistance (RDS) is 0.55 Ohms Max Breakdown Voltage from Drain to Source: 400V Max Gate to Source Voltage Should Be: ±20V Max Continues Drain Current is : 10A Max Pulsed Drain Current is: 40A Max Power Dissipation is: 125W Minimum Voltage Required to Conduct: 2V to 4V Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
IRF740 Applications : UPS Inverter Circuits DC-DC Converters Battery charger circuits LED dimmers or flashers High voltage applications Lighting and ballast circuits High Speed switching applications
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