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IRF730

IRF730

IRF730

STMicroelectronics

IRF730 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

IRF730 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Series PowerMESH™ II
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH VOLTAGE, FAST SWITCHING
Subcategory FET General Purpose Power
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating5.5A
Base Part Number IRF7
Pin Count3
Number of Elements 1
Voltage 400V
Power Dissipation-Max 100W Tc
Element ConfigurationSingle
Current 55A
Operating ModeENHANCEMENT MODE
Power Dissipation100W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 5.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage 400V
Feedback Cap-Max (Crss) 65 pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:7398 items

Pricing & Ordering

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IRF730 Product Details

IRF730 Description


The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.



IRF730 Features


  • Exceptional dv/dt capability

  • 100% avalanche tested

  • Low gate charge

  • Drain-source On Resistance-Max: 1Ohm

  • Turn-Off Delay Time: 15 ns

  • ROHS3 Compliant

  • Contains Lead



IRF730 Applications


  • Switching application

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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