BUL49D Overview
In this device, the DC current gain is 4 @ 7A 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.2V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 800mA, 4A.The base voltage of the emitter can be kept at 10V to achieve high efficiency.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.An input voltage of 450V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
BUL49D Features
the DC current gain for this device is 4 @ 7A 10V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 800mA, 4A
the emitter base voltage is kept at 10V
the current rating of this device is 5A
BUL49D Applications
There are a lot of STMicroelectronics BUL49D applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
