BUL1203EFP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 9 @ 2A 5V DC current gain.When VCE saturation is 1.5V @ 1A, 3A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 5A volts can be achieved.
BUL1203EFP Features
the DC current gain for this device is 9 @ 2A 5V
the vce saturation(Max) is 1.5V @ 1A, 3A
the emitter base voltage is kept at 9V
BUL1203EFP Applications
There are a lot of STMicroelectronics BUL1203EFP applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
