BD536 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 2A 2V.The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 12MHz is present in the part.During maximum operation, collector current can be as low as 8A volts.
BD536 Features
the DC current gain for this device is 25 @ 2A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 12MHz
BD536 Applications
There are a lot of STMicroelectronics BD536 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface