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BD536

BD536

BD536

STMicroelectronics

BD536 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BD536 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation50W
Current Rating-8A
Base Part Number BD536
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation50W
Transistor Application SWITCHING
Gain Bandwidth Product12MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A
Collector Emitter Breakdown Voltage60V
Transition Frequency 12MHz
Collector Emitter Saturation Voltage800mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
VCEsat-Max 0.8 V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4859 items

BD536 Product Details

BD536 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 2A 2V.The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 12MHz is present in the part.During maximum operation, collector current can be as low as 8A volts.

BD536 Features


the DC current gain for this device is 25 @ 2A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 12MHz

BD536 Applications


There are a lot of STMicroelectronics BD536 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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