2STR2215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.With a collector emitter saturation voltage of 850mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 850mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In the part, the transition frequency is 100MHz.Breakdown input voltage is 15V volts.Collector current can be as low as 1.5A volts at its maximum.
2STR2215 Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2STR2215 Applications
There are a lot of STMicroelectronics 2STR2215 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
