2STP535FP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 4V.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.This device can take an input voltage of 180V volts before it breaks down.Collector current can be as low as 8A volts at its maximum.
2STP535FP Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
2STP535FP Applications
There are a lot of STMicroelectronics 2STP535FP applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
