2ST5949 Overview
In this device, the DC current gain is 80 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.25MHz is present in the transition frequency.Collector current can be as low as 17A volts at its maximum.
2ST5949 Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 6V
a transition frequency of 25MHz
2ST5949 Applications
There are a lot of STMicroelectronics 2ST5949 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
