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GP1M012A060H

GP1M012A060H

GP1M012A060H

SemiQ

MOSFET N-CH 600V 12A TO220

SOT-23

GP1M012A060H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 231W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2308pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:1875 items

About GP1M012A060H

The GP1M012A060H from SemiQ is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 12A TO220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GP1M012A060H, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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