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GP1M003A080CH

GP1M003A080CH

GP1M003A080CH

SemiQ

MOSFET N-CH 800V 3A DPAK

SOT-23

GP1M003A080CH Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 94W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 696pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:3270 items

About GP1M003A080CH

The GP1M003A080CH from SemiQ is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 800V 3A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GP1M003A080CH, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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