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SSH9N80A

SSH9N80A

SSH9N80A

SAMSUNG SEMICONDUCTOR INC

SSH9N80A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website

SOT-23

SSH9N80A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Number of Terminals 3
Transistor Element Material SILICON
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 1.3Ohm
Pulsed Drain Current-Max (IDM) 36A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 432 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 240W
Feedback Cap-Max (Crss) 95 pF
Turn Off Time-Max (toff) 330ns
Turn On Time-Max (ton) 145ns
Power Dissipation Ambient-Max 240W
In-Stock:4649 items

About SSH9N80A

The SSH9N80A from SAMSUNG SEMICONDUCTOR INC is a high-performance microcontroller designed for a wide range of embedded applications. This component features SSH9N80A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SSH9N80A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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