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IRFU210A

IRFU210A

IRFU210A

SAMSUNG SEMICONDUCTOR INC

IRFU210A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website

SOT-23

IRFU210A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Number of Terminals 3
Transistor Element Material SILICON
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
Pin Count3
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 2.7A
Drain-source On Resistance-Max 1.5Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 44 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 26W
In-Stock:4503 items

About IRFU210A

The IRFU210A from SAMSUNG SEMICONDUCTOR INC is a high-performance microcontroller designed for a wide range of embedded applications. This component features IRFU210A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRFU210A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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