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IRFS150A

IRFS150A

IRFS150A

SAMSUNG SEMICONDUCTOR INC

IRFS150A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website

SOT-23

IRFS150A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Number of Terminals 3
Transistor Element Material SILICON
ECCN Code EAR99
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
Pin Count3
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 124A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 641 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 100W
In-Stock:3699 items

About IRFS150A

The IRFS150A from SAMSUNG SEMICONDUCTOR INC is a high-performance microcontroller designed for a wide range of embedded applications. This component features IRFS150A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRFS150A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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