Welcome to Hotenda.com Online Store!

logo
userjoin
Home

CIGW252010GM1R0MNE

CIGW252010GM1R0MNE

CIGW252010GM1R0MNE

Samsung Electro-Mechanics

POWER INDUCTOR, GENERAL METAL COMPOSITE, 1008INCH,20%, 7"

SOT-23

CIGW252010GM1R0MNE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 1008 (2520 Metric)
Supplier Device Package 1008 (2520 Metric)
Material - Core Metal Composite
Operating Temperature-40°C~85°C
PackagingTape & Reel (TR)
Series CIGW
Size / Dimension 0.098Lx0.079W 2.50mmx2.00mm
Tolerance ±20%
Part StatusActive
Type Wirewound
Current Rating (Amps) 3.5A
Shielding Shielded
Inductance 1μH
DC Resistance (DCR) 52mOhm Max
Inductance Frequency - Test 1MHz
Current - Saturation 3.3A
Height Seated (Max) 0.039 1.00mm
RoHS StatusRoHS Compliant
In-Stock:2225 items

About CIGW252010GM1R0MNE

The CIGW252010GM1R0MNE from Samsung Electro-Mechanics is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER INDUCTOR, GENERAL METAL COMPOSITE, 1008INCH,20%, 7".

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the CIGW252010GM1R0MNE, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News