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CIG10W1R0MNC

CIG10W1R0MNC

CIG10W1R0MNC

Samsung Electro-Mechanics

Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 950mA 200mOhm DCR 0603 Paper T/R

SOT-23

CIG10W1R0MNC Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 0603 (1608 Metric)
Core MaterialFerrite
Operating Temperature-40°C~125°C
PackagingTape & Reel (TR)
Published 2013
Series CIG10W
Size / Dimension 0.063Lx0.031W 1.60mmx0.80mm
Tolerance ±20%
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Type Multilayer
Max Operating Temperature125°C
Min Operating Temperature -40°C
Current Rating (Amps) 950mA
Shielding Shielded
Depth 950μm
Current Rating950mA
Military Standard Not
Case Code (Metric) 1608
Case Code (Imperial) 0603
Inductance 1μH
Test Frequency1MHz
DC Resistance (DCR) 200mOhm
Inductance Frequency - Test 1MHz
DC Current 950mA
Length 1.75mm
Width 787.4μm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1960 items

About CIG10W1R0MNC

The CIG10W1R0MNC from Samsung Electro-Mechanics is a high-performance microcontroller designed for a wide range of embedded applications. This component features Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 950mA 200mOhm DCR 0603 Paper T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the CIG10W1R0MNC, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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