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RSS060P05FRATB

RSS060P05FRATB

RSS060P05FRATB

ROHM Semiconductor

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 36m Ω @ 6A, 10V ±20V 2700pF @ 10V 32.2nC @ 5V 45V 8-SOIC (0.154, 3.90mm Width)

SOT-23

RSS060P05FRATB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Surface MountYES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Published 2017
Series Automotive, AEC-Q101
PackagingCut Tape (CT)
Operating Temperature150°C
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating ModeENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 32.2nC @ 5V
Drain to Source Voltage (Vdss) 45V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) -6A
Threshold Voltage -2.5V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.053Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 45V
RoHS StatusROHS3 Compliant
REACH SVHC Unknown
In-Stock:8354 items

Pricing & Ordering

QuantityUnit PriceExt. Price

RSS060P05FRATB Product Details

RSS060P05FRATB Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2700pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -6A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 24A.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -2.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 45V in order to maintain normal operation.Operating this transistor requires a 45V drain to source voltage (Vdss).By using drive voltage (4V 10V), this device helps reduce its overall power consumption.

RSS060P05FRATB Features


a continuous drain current (ID) of -6A
based on its rated peak drain current 24A.
a threshold voltage of -2.5V
a 45V drain to source voltage (Vdss)


RSS060P05FRATB Applications


There are a lot of ROHM Semiconductor
RSS060P05FRATB applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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