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RFV8TJ6SGC9

RFV8TJ6SGC9

RFV8TJ6SGC9

ROHM Semiconductor

DIODE GEN PURP 600V 8A TO220ACFP

SOT-23

RFV8TJ6SGC9 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package TO-220ACFP
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 2.8V @ 8A
Operating Temperature - Junction 150°C Max
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 8A
Max Reverse Voltage (DC) 600V
Average Rectified Current8A
Reverse Recovery Time 45 ns
RoHS StatusROHS3 Compliant
In-Stock:5821 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.204081$4.204081
10$3.966115$39.66115
100$3.741617$374.1617
500$3.529827$1764.9135
1000$3.330026$3330.026

About RFV8TJ6SGC9

The RFV8TJ6SGC9 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 600V 8A TO220ACFP.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RFV8TJ6SGC9, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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