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RFUH30TS6SGC11

RFUH30TS6SGC11

RFUH30TS6SGC11

ROHM Semiconductor

DIODE GEN PURP 600V 15A TO247

SOT-23

RFUH30TS6SGC11 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
PackagingTube
Published 2018
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 2.8V @ 30A
Operating Temperature - Junction 150°C Max
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 15A
Max Reverse Voltage (DC) 600V
Average Rectified Current15A
Reverse Recovery Time 35 ns
RoHS StatusROHS3 Compliant
In-Stock:1619 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.160880$3.16088
10$2.981962$29.81962
100$2.813172$281.3172
500$2.653936$1326.968
1000$2.503713$2503.713

About RFUH30TS6SGC11

The RFUH30TS6SGC11 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 600V 15A TO247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RFUH30TS6SGC11, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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