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R6535KNZC17

R6535KNZC17

R6535KNZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 115m Ω @ 18.1A, 10V ±20V 3nF @ 25V 72nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6535KNZC17 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature150°C TJ
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 102W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 115m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id 5V @ 1.21mA
Input Capacitance (Ciss) (Max) @ Vds 3nF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:4595 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.971000$6.971
10$6.576415$65.76415
100$6.204165$620.4165
500$5.852986$2926.493
1000$5.521685$5521.685

R6535KNZC17 Product Details

R6535KNZC17 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3nF @ 25V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

R6535KNZC17 Features


a 650V drain to source voltage (Vdss)


R6535KNZC17 Applications


There are a lot of ROHM Semiconductor
R6535KNZC17 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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