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R6535ENZC17

R6535ENZC17

R6535ENZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 115m Ω @ 18.1A, 10V ±20V 2.6nF @ 25V 110nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6535ENZC17 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature150°C TJ
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 102W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 115m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id 4V @ 1.21mA
Input Capacitance (Ciss) (Max) @ Vds 2.6nF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:3280 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.807337$6.807337
10$6.422016$64.22016
100$6.058505$605.8505
500$5.715572$2857.786
1000$5.392049$5392.049

R6535ENZC17 Product Details

R6535ENZC17 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.6nF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 650V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

R6535ENZC17 Features


a 650V drain to source voltage (Vdss)


R6535ENZC17 Applications


There are a lot of ROHM Semiconductor
R6535ENZC17 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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