Welcome to Hotenda.com Online Store!

logo
userjoin
Home

R6530KNZC17

R6530KNZC17

R6530KNZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 140m Ω @ 14.5A, 10V ±20V 2.35nF @ 25V 56nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6530KNZC17 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature150°C TJ
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 86W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 960μA
Input Capacitance (Ciss) (Max) @ Vds 2.35nF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:3998 items

R6530KNZC17 Product Details

R6530KNZC17 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.35nF @ 25V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

R6530KNZC17 Features


a 650V drain to source voltage (Vdss)


R6530KNZC17 Applications


There are a lot of ROHM Semiconductor
R6530KNZC17 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

Get Subscriber

Enter Your Email Address, Get the Latest News