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R6524KNZC8

R6524KNZC8

R6524KNZC8

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 185m Ω @ 11.3A, 10V ±20V 1.85nF @ 25V 45nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6524KNZC8 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 74W Tc
Operating ModeENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 185m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 5V @ 750μA
Input Capacitance (Ciss) (Max) @ Vds 1.85nF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.185Ohm
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 654 mJ
RoHS StatusROHS3 Compliant
In-Stock:1088 items

R6524KNZC8 Product Details

R6524KNZC8 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 654 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.85nF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 24A.A maximum pulsed drain current of 72A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 650V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

R6524KNZC8 Features


the avalanche energy rating (Eas) is 654 mJ
based on its rated peak drain current 72A.
a 650V drain to source voltage (Vdss)


R6524KNZC8 Applications


There are a lot of ROHM Semiconductor
R6524KNZC8 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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