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R6524ENZC8

R6524ENZC8

R6524ENZC8

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 185m Ω @ 11.3A, 10V ±20V 1.65nF @ 25V 70nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6524ENZC8 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 74W Tc
Operating ModeENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 185m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 4V @ 750μA
Input Capacitance (Ciss) (Max) @ Vds 1.65nF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.185Ohm
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 654 mJ
RoHS StatusROHS3 Compliant
In-Stock:4602 items

R6524ENZC8 Product Details

R6524ENZC8 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 654 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.65nF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [24A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 72A.The DS breakdown voltage should be maintained above 650V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

R6524ENZC8 Features


the avalanche energy rating (Eas) is 654 mJ
based on its rated peak drain current 72A.
a 650V drain to source voltage (Vdss)


R6524ENZC8 Applications


There are a lot of ROHM Semiconductor
R6524ENZC8 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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