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R6020ENZM12C8

R6020ENZM12C8

R6020ENZM12C8

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 196m Ω @ 9.5A, 10V ±20V 1.4nF @ 25V 60nC @ 10V 600V TO-3P-3 Full Pack

SOT-23

R6020ENZM12C8 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature150°C TJ
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 196m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1.4nF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:2280 items

R6020ENZM12C8 Product Details

R6020ENZM12C8 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.4nF @ 25V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

R6020ENZM12C8 Features


a 600V drain to source voltage (Vdss)


R6020ENZM12C8 Applications


There are a lot of ROHM Semiconductor
R6020ENZM12C8 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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