Welcome to Hotenda.com Online Store!

logo
userjoin
Home

R6015ENZM12C8

R6015ENZM12C8

R6015ENZM12C8

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 290m Ω @ 6.5A, 10V ±20V 910pF @ 25V 40nC @ 10V 600V TO-3P-3 Full Pack

SOT-23

R6015ENZM12C8 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature150°C TJ
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 290m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:4298 items

R6015ENZM12C8 Product Details

R6015ENZM12C8 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 910pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

R6015ENZM12C8 Features


a 600V drain to source voltage (Vdss)


R6015ENZM12C8 Applications


There are a lot of ROHM Semiconductor
R6015ENZM12C8 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

Get Subscriber

Enter Your Email Address, Get the Latest News