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MTZJT-7716B

MTZJT-7716B

MTZJT-7716B

ROHM Semiconductor

ZENER DIODE 25Ohm ±3% 15.645V 200nA @ 12V 500mW 2 Terminations DO-204AG, DO-34, Axial

SOT-23

MTZJT-7716B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AG, DO-34, Axial
Number of Pins 2
Diode Element Material SILICON
PackagingTape & Box (TB)
Published 2004
Tolerance ±3%
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN/TIN COPPER
Max Operating Temperature150°C
Min Operating Temperature -65°C
Additional FeatureHIGH RELIABILITY
HTS Code8541.10.00.50
Power Rating 500mW
Voltage - Rated DC 16V
Max Power Dissipation500mW
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance25Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 200nA @ 12V
Power Dissipation500mW
Case Connection ISOLATED
Max Reverse Leakage Current 200nA
Impedance-Max 25Ohm
Reference Voltage16V
Zener Voltage 15.645V
Working Test Current 5mA
Voltage Tolerance3%
Zener Current20mA
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1909 items

MTZJT-7716B Product Details

MTZJT-7716B Overview


An electrical device like this requires a reverse leakage current of 200nA @ 12V.During reverse leakage, the maximum current reaches 200nA.Design flexibility is enhanced by its zener current of 20mA.This device must be operated with the working test voltage set to 5mA.

MTZJT-7716B Features


reverse leakage current of 200nA @ 12V
200nA @ 12V is the maximum voltage (Tol)
Reverse leakage current reaches 200nA
the zener current of 20mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


MTZJT-7716B Applications


There are a lot of ROHM Semiconductor
MTZJT-7716B applications of zener single diodes.


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