Name: IMD10AT108
Brand: ROHM Semiconductor
SKU: IMD10AT108
Price: 0.50000 USD
Availability: InStock

new-10%

IMD10AT108

Manufacturer part number:IMD10AT108

Manufacturer:ROHM Semiconductor

Description:IMD10AT108 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:IMD10AT108 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Copper, Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Number of Pins	74
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 10
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signals
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Time@Peak Reflow Temperature-Max (s)	10
Base Part Number	MD10A
Pin Count	6
JESD-30 Code	R-PDSO-G6
Max Output Current	500mA
Operating Supply Voltage	50V
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	300mW
Transistor Application	SWITCHING
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA 5V / 68 @ 100mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	50V
Current - Collector (Ic) (Max)	100mA 500mA
Transition Frequency	250MHz
Collector Emitter Saturation Voltage	300mV
Max Breakdown Voltage	50V
Frequency - Transition	250MHz 200MHz
Emitter Base Voltage (VEBO)	5V
hFE Min	100
Resistor - Base (R1)	10k Ω, 100 Ω
Continuous Collector Current	-500mA
Resistor - Emitter Base (R2)	10k Ω
Height	1.1mm
Length	2.9mm
Width	1.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About IMD10AT108

The IMD10AT108 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features IMD10AT108 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available on our website.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IMD10AT108, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.