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EDZVT2R8.2B

EDZVT2R8.2B

EDZVT2R8.2B

ROHM Semiconductor

ZENER DIODE 30Ohm ±2% 8.2V 500nA @ 5V -55°C~150°C 150mW 2 Terminations SC-79, SOD-523

SOT-23

EDZVT2R8.2B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
Number of Pins 2
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Tolerance ±2%
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional FeatureHIGH RELIABILITY
HTS Code8541.10.00.50
Max Power Dissipation150mW
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance30Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 5V
Max Reverse Leakage Current 500nA
Impedance-Max 30Ohm
Reference Voltage8.2V
Zener Voltage 8.2V
Working Test Current 5mA
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:28150 items

Pricing & Ordering

QuantityUnit PriceExt. Price

EDZVT2R8.2B Product Details

EDZVT2R8.2B Overview


The reverse leakage current needed to power this electric device is 500nA @ 5V.The reverse leakage current reaches zero at its maximum.Setting the working test voltage to 5mA will allow this device to operate.

EDZVT2R8.2B Features


reverse leakage current of 500nA @ 5V
500nA @ 5V is the maximum voltage (Tol)
Reverse leakage current reaches 500nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


EDZVT2R8.2B Applications


There are a lot of ROHM Semiconductor
EDZVT2R8.2B applications of zener single diodes.


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