Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BSS4130AT116

BSS4130AT116

BSS4130AT116

ROHM Semiconductor

BSS4130AT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BSS4130AT116 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 400MHz
RoHS StatusROHS3 Compliant
In-Stock:16729 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.570559$0.570559
10$0.538263$5.38263
100$0.507795$50.7795
500$0.479052$239.526
1000$0.451936$451.936

BSS4130AT116 Product Details

BSS4130AT116 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 500mA.The device has a 30V maximal voltage - Collector Emitter Breakdown.

BSS4130AT116 Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 25mA, 500mA

BSS4130AT116 Applications


There are a lot of ROHM Semiconductor BSS4130AT116 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News