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BSM400D12P2G003

BSM400D12P2G003

BSM400D12P2G003

ROHM Semiconductor

SILICON CARBIDE POWER MODULE. B

SOT-23

BSM400D12P2G003 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Package / Case Module
Operating Temperature-40°C~150°C TJ
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 2450W Tc
FET Type 2 N-Channel (Half Bridge)
Vgs(th) (Max) @ Id 4V @ 85mA
Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 400A Tc
Drain to Source Voltage (Vdss) 1200V 1.2kV
FET Feature Silicon Carbide (SiC)
RoHS StatusROHS3 Compliant
In-Stock:32 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About BSM400D12P2G003

The BSM400D12P2G003 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features SILICON CARBIDE POWER MODULE. B.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BSM400D12P2G003, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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