BC848BT116 Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at 100mA to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.As you can see, the part has a transition frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC848BT116 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC848BT116 Applications
There are a lot of ROHM Semiconductor BC848BT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
