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2SD1898T100P

2SD1898T100P

2SD1898T100P

ROHM Semiconductor

2SD1898T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD1898T100P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD1898
Pin Count3
JESD-30 Code R-PSSO-F3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 82
Continuous Collector Current 1A
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3454 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.292457$2.292457
10$2.162695$21.62695
100$2.040279$204.0279
500$1.924791$962.3955
1000$1.815841$1815.841

2SD1898T100P Product Details

2SD1898T100P Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 82 @ 500mA 3V.When VCE saturation is 400mV @ 20mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.A transition frequency of 100MHz is present in the part.Maximum collector currents can be below 1A volts.

2SD1898T100P Features


the DC current gain for this device is 82 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz

2SD1898T100P Applications


There are a lot of ROHM Semiconductor 2SD1898T100P applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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